Study of Organic Field-Effect Transistors Using Charge Modulation Spectroscopy: Behavior of Injected Carriers
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概要
- 論文の詳細を見る
We have studied poly(3-hexylthiophene) (P3HT) and the injected charge behavior in metal–insulator–semiconductor (MIS) diodes. Charge modulation spectroscopy (CMS) and impedance measurements were conducted to study the energy states and location of injected carriers in the MIS diodes with the P3HT. CMS spectra clearly showed polaron state formation in the P3HT by injected holes. We also observed threshold voltage shifts in capacitance–voltage ($C$–$V$) characteristics due to photoillumination and application of voltage. The results showed the trapping of injected holes and electrons generated by illumination, suggesting the presence of electron and hole trapping states in the P3HT MIS diodes.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
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WEIS Martin
Department of Physical Electronics, Tokyo Institute of Technology
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyazawa Ryo
Department Of Physical Electronics Tokyo Institute Of Technology
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Takaaki Manaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Mitsumasa Iwamoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Ryo Miyazawa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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