Channel Formation as an Interface Charging Process in a Pentacene Field Effect Transistor Investigated by Time-Resolved Second Harmonic Generation and Impedance Spectroscopy
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概要
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The channel formation process in a pentacene field effect transistor was studied by directly probing the carrier motion along the channel in the time domain and the capacitance changes in the frequency domain. With the source and drain electrodes short circuited and the voltage applied only to the gate electrode, the carrier injection from both top electrodes and its motion along the channel was still observable, implying an interface charging process driven by a self-induced electric field. In addition, it was found that when the source and drain electrodes were short circuited, the capacitance of the device was larger than the geometric capacitance and proportional to the channel length, which also supported the interface charging model. The relationship between the two approaches was also discussed.
- 2012-02-25
著者
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Zhang Le
Department Of Chemistry Wuhan University
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Masada Hiroshi
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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