Photoinduced Gate Modulation and Temperature Dependence in the Coulomb Staircase of Organic Single Electron Tunneling Junctions
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概要
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Threshold voltage shift in the Coulomb staircase induced by photoirradiation, that is, photoinduced gate modulation, was observed at a temperature of 15 K. The samples denoted by Au/PI/CuttbPc/PI/Al consisted of Kapton-type polyimide (PI) spin-coated films with copper tetra-t-butyl phthalocyanine (CuttbPc), sandwiched between Au and Al electrodes. The temperature dependence of the Coulomb staircase was also examined within the range of 15 K to 300 K. The single electron tunneling process was dominant below 150 K, whereas a thermally assisted electron conduction mechanism such as the hopping mechanism was dominant above 150 K. It was found that the photoinduced gate modulation and the temperature dependence observed in the Coulomb staircase of our junctions could be well explained by taking into account the space charge behavior at the metal/organic ultra-thin film interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Noguchi Yutaka
Department Of Biochemistry And Molecular Biology Tokyo University Of Pharmacy And Life Science
-
Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Noguchi Yutaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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