Analysis of Carrier Injection into Pentacene FET Using Maxwell-Wagner Model(Organic Molecular Devices,<Special Section>Towards the Realization of Organic Molecular Electronics)
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概要
- 論文の詳細を見る
To clarify the carrier transport mechanism of pentacene field-effect transistors (FETs), the FET characteristics was examined in the region where the drain-source voltage V_<ds> is lower than the saturated voltage. The I_<ds>-V_<ds> characteristics shows the ohmic behavior in the low voltage region, whereas it shows the characteristics explained by the Maxwell-Wagner model. This result clearly indicates that carrier injection from source makes a significant contribution to the carrier transport. It was also shown that the change of I_<ds>-V_<ds> characteristics from the ohmic behavior to the Maxwell-Wagner behavior is similar with the I-V characteristics change from the ohmic to the space charge limited current behavior observed in metal-organic film-metal junctions, including metal-pentacene-metal.
- 社団法人電子情報通信学会の論文
- 2006-12-01
著者
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MANAKA Takaaki
Department of Physical Electronics, Tokyo Institute of Technology
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IWAMOTO Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology
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Lim Eunju
Tokyo Inst. Technol. Tokyo Jpn
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Iwamoto Mitsumasa
Tokyo Inst. Technol. Tokyo Jpn
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Lim Eunju
Department Of Physical Electronics Tokyo Institute Of Technology
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Tamura Ryosuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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