Analysis of threshold voltage shift of pentacene field effect transistor based on a Maxwell-Wagner effect (Special issue: Solid state devices and materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Lim Eunju
Tokyo Inst. Technol. Tokyo Jpn
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Tamura Ryosuke
Department Of Physical Electronics Tokyo Institute Of Technology
関連論文
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- Analysis of Threshold Voltage Shift of Pentacene Field Effect Transistor Based on a Maxwell–Wagner Effect
- Maxwell–Wagner Model Analysis for the Capacitance–Voltage Characteristics of Pentacene Field Effect Transistor
- Surface Morphology and Electrical Transport Properties of Polydiacetylene-Based Organic Field-Effect Transistors
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