Probing of Carrier Injection into Organic Field Effect Transistor by Optical Second Harmonic Generation
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概要
- 論文の詳細を見る
To probe the carrier injection from Au source electrode into the channel of pentacene field effect transistors (FET), optical second harmonic generation (SHG) measurement is employed. SHG is enhanced at the off state due to Laplace electric field formation, whereas it is diminished at the on state. As the generation of SHG signal is in proportional to the electric field formed in the channel, we concluded that SHG measurement can probe the change of the electric field in the pentacene FET channel due to the injected and subsequently trapped holes.
- 社団法人 電気学会の論文
- 2007-05-01
著者
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MANAKA Takaaki
Department of Physical Electronics, Tokyo Institute of Technology
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IWAMOTO Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology
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Lim Eunju
Tokyo Inst. Technol. Tokyo Jpn
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Iwamoto Mitsumasa
Department Of Physical Electronics Tokyo Institute Of Technology
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Lim Eunju
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Iwamoto Mitsumasa
Dep. Of Physical Electronics Tokyo Inst. Of Technol.
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IWAMOTO Mitsumasa
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology
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