Charge Storage Phenomena and I-V Characteristics Observed in Ultrathin Polyimide Langmuir-Blodgett Films
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概要
- 論文の詳細を見る
We fabricated Au/PI/Al junctions and then examined the charge storage phenomena in polyimide (PI) layers. We also examined the current-voltage (I-V) characteristics of the junctions in connection with charge storage phenomena. It was found that numerous excess charges were injected into PI multilayers from electrodes by the application of biasing voltages. Therefore, the space charge field formed in as-deposited PI layers was distorted by the excess charges injected. It was also found that asymmetric I-V characteristics observed for Au/PI/Al junctions depended on the biasing voltages, because the space charge field formed in PI layers influenced the I-V characteristics.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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IWAMOTO Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology
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Iwamoto M
Tokyo Inst. Technol. Tokyo Jpn
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FUKUDA Atsushi
Department of Physical Electronics, Tokyo Institute of Technology
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Fukuda Atsushi
Department Of Bioscience Tokyo University Of Agriculture
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Fukuda Atsushi
Department Of Physical Electronics Tokyo Institute Of Technology
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