Investigation of Electron Transport Properties of Polyimide Langmuir-Blodgett Films Containing Porphyrin by d^2V/dI^2-V Measurement
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概要
- 論文の詳細を見る
We fabricated junctions with a polyimide (PI) Langmuir-Blodgett (LB) film, and then examined electron tunneling through PI LB films. It was concluded that PI LB films function as good electrical tunneling barriers for inelastic electron tunneling spectroscopy (IETS). We also fabricated junctions with a PI LB film containing porphyrin (PORPI), and then examined the electron transport properties of the junctions by means of NETS measurement. An inelastic tunneling process accompanying by the energy loss due to either the excitation of vibrational modes of porphyrin or the excitation of electronic transitions in porphyrin was observed.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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IWAMOTO Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology
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Wada Masami
Department Of Physical Electronics Tokyo Institute Of Technology
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Kubota Tohru
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address) Kansai Advanced R
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Kubota Tohru
Department Of Physical Electronics Tokyo Institute Of Technology
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Kubota Tohru
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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