Effects of Gold Nanoparticles on Pentacene Organic Field-effect Transistors

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概要

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• The effect of gold nanoparticles (NPs) on pentacene organic field-effect transistors (OFETs) was being investigated by both DC and AC methods, which are current--voltage ($I$--$V$) measurements in steady-state and impedance spectroscopy (IS) respectively. Here poly(vinyl alcohol) (PVA) and PVA blended with Au NPs as composite are spin-coated on SiO2 as gate-insulator for top-contact pentacene OFET. The characteristics of the device were being investigated based on the contact resistance, trapped charges, effective mobility and threshold voltage based on transfer characteristics of OFET. Results revealed that OFET with NPs exhibited larger hysteresis and higher contact resistance at high voltage region. IS measurements were performed and the fitting of results by the Maxwell--Wagner equivalent circuit showed that for device with NPs a series of capacitance and resistance which represents trapping must be introduced in order to have agreeable fitting. The fitting had helped to clarify the reason behind the higher contact resistance and bigger hysteresis which was mainly caused by the space charge field formed by the traps when Au NPs were introduced into the device.

• 2011-04-25

著者

• Manaka Takaaki

  Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec

• Iwamoto Mitsumasa

  Department Of Electrical And Electronic Engineering

• Ou-yang Wei

  Department Of Physical Electronics Tokyo Institute Of Technology

• Taguchi Dai

  Department Of Physical Electronics Tokyo Institute Of Technology

• WEIS Martin

  Institute of Electronics and Photonics, Slovak University of Technology

• Manaka Takaaki

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan

• Lee Keanchuan

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan

• Ou-Yang Wei

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan

• Taguchi Dai

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan

• Weis Martin

  Institute of Physics, Slovak Academy of Sciences, Dubravská cesta 9, 845 11 Bratislava 45, Slovakia

• Iwamoto Mitsumasa

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan

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