Contact Resistance as an Origin of the Channel-Length-Dependent Threshold Voltage in Organic Field-Effect Transistors
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概要
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Here we report a dielectric approach to verify the channel dependence of the threshold voltage in organic field-effect transistors (OFETs). This approach is based on dielectrics physics, and it shows that the potential drop on the injection electrode reduces the capability of applied voltage to accumulate charges that contribute to carrier transport along the channel, which is interpreted as a shift of the threshold voltage. That is, contact resistance is an origin of the channel-length-dependent threshold voltage.
- 2012-10-25
著者
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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WEIS Martin
Institute of Electronics and Photonics, Slovak University of Technology
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Lee Keanchuan
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova, Bratislava 81219, Slovakia
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