Electron Injection into Pentacene Field-Effect Transistor Observed by Time-Resolved Optical Second Harmonic Generation Imaging

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概要

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• Electron injection from a gold (Au) electrode into a pentacene field-effect transistor (FET) was investigated by time-resolved microscopic optical second harmonic generation (TRM-SHG) imaging. The evolution of the TRM-SHG images below the source electrode evidently showed the presence of electron injection. The transient electric field migration in the FET channel indicated an inhibited electron transport attributed to a high electron trap density. The theoretical approach based on the two-dimensional coupled diffusion-drift and Poisson equations with the multiple-trapping and releasing process clearly supports the trap-inhibited transport.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Liu Fei

  Center For Advanced Study Tsinghua University

• Manaka Takaaki

  Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec

• Nakao Motoharu

  Department Of Physical Electronics Tokyo Institute Of Technology

• Mitsumasa Iwamoto

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Fei Liu

  Center for Advanced Study, Tsinghua University, Beijing 100084, China

• Martin Weis

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Motoharu Nakao

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

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