Martin Weis | Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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概要
- Weis Martinの詳細を見る
- 同名の論文著者
- Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japanの論文著者
関連著者
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Mitsumasa Iwamoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Martin Weis
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Ou-yang Wei
Department Of Physical Electronics Tokyo Institute Of Technology
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Chen Xiangyu
Department Of Physical Electronics Tokyo Institute Of Technology
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Takaaki Manaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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WEIS Martin
Department of Physical Electronics, Tokyo Institute of Technology
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Liu Fei
Center For Advanced Study Tsinghua University
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Nakao Motoharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Wei Ou-Yang
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Fei Liu
Center for Advanced Study, Tsinghua University, Beijing 100084, China
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Dai Taguchi
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Xiangyu Chen
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Motoharu Nakao
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
著作論文
- Electron Injection into Pentacene Field-Effect Transistor Observed by Time-Resolved Optical Second Harmonic Generation Imaging
- Reduction of Hysteresis in Organic Field-Effect Transistor by Ferroelectric Gate Dielectric
- Tuning of Threshold Voltage in Organic Field-Effect Transistor by Dipole Monolayer