Ou-yang Wei | Department Of Physical Electronics Tokyo Institute Of Technology
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概要
関連著者
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Ou-yang Wei
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Chen Xiangyu
Department Of Physical Electronics Tokyo Institute Of Technology
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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WEIS Martin
Department of Physical Electronics, Tokyo Institute of Technology
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WEIS Martin
Institute of Electronics and Photonics, Slovak University of Technology
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間中 孝彰
東工大
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岩本 光正
東工大
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MANAKA Takaaki
Department of Physical Electronics, Tokyo Institute of Technology
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IWAMOTO Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology
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岩本 光正
東京工業大学
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Iwamoto Mitsumasa
Tokyo Inst. Technol. Tokyo Jpn
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Iwamoto Mitsumasa
Dept. Of Phys. Elec Tokyo Tech.
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CHEN Xiangyu
Department of Physical Electronics, Tokyo Institute of Technology
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology
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Motoji Toshiko
Tokyo Women's Medical University
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Weis Martin
Graduate School Of Science And Engineering Department Of Physical Electronics Tokyo Institute Of Tec
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Manaka Takaaki
Graduate School Of Science And Engineering Department Of Physical Electronics Tokyo Institute Of Tec
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Takaaki Manaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Mitsumasa Iwamoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Lee Keanchuan
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Martin Weis
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Zhang Le
Department Of Chemistry Wuhan University
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WEI Ou-Yang
Department of Physical Electronics, Tokyo Institute of Technology
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Aida Takahiro
Department Of Materials Science And Ceramic Technology Shonan Institute Of Technology
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Li Jun
Department Of Biochemistry Zhongshan School Of Medicine Sun Yat-sen University
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Yamamoto Tetsuya
Department Of Astronomy School Of Science The University Of Tokyo
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Wei Ou-Yang
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Dai Taguchi
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Institute of Physics, Slovak Academy of Sciences, Dubravská cesta 9, 845 11 Bratislava 45, Slovakia
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Weis Martin
Institute of Electronics and Photonics, Slovak University of Technology, Ilkovicova, Bratislava 81219, Slovakia
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Weis Martin
Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 84511 Bratislava, Slovakia
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Lee Keanchuan
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Yamamoto Tetsuya
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Aida Takahiro
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Xiangyu Chen
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Zhang Le
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
著作論文
- Hysteresis Behavior Analysis of Organic Field Effect Transistor with P(VDF-TrFE) LB film gate-insulator
- Hysteresis behavior analysis of organic field effect transistor with P(VDF-TrFE) LB film gate-insulator (有機エレクトロニクス)
- Function of Interfacial Dipole Monolayer in Organic Field Effect Transistors
- Effects of Gold Nanoparticles on Pentacene Organic Field-effect Transistors
- Study of Carrier Behavior in Pentacene in a Au/Pentacene/Ferroelectric Poly(vinylidene fluoride–trifluoroethylene)/Indium Tin Oxide Structure by Electric-Field-Induced Second-Harmonic Generation Measurement
- Study of Domain Shapes and Orientational Structure of Phospholipid Monolayers using Maxwell Displacement Current and Brewster Angle Microscopy
- Effect of an Upward and Downward Interface Dipole Langmuir--Blodgett Monolayer on Pentacene Organic Field-Effect Transistors: A Comparison Study
- Reduction of Hysteresis in Organic Field-Effect Transistor by Ferroelectric Gate Dielectric
- Tuning of Threshold Voltage in Organic Field-Effect Transistor by Dipole Monolayer