WEIS Martin | Institute of Electronics and Photonics, Slovak University of Technology
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概要
- WEIS Martinの詳細を見る
- 同名の論文著者
- Institute of Electronics and Photonics, Slovak University of Technologyの論文著者
関連著者
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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WEIS Martin
Institute of Electronics and Photonics, Slovak University of Technology
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Lee Keanchuan
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Ou-yang Wei
Department Of Physical Electronics Tokyo Institute Of Technology
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Chen Xiangyu
Department Of Physical Electronics Tokyo Institute Of Technology
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Li Jun
Department Of Biochemistry Zhongshan School Of Medicine Sun Yat-sen University
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Weis Martin
Institute of Physics, Slovak Academy of Sciences, Dubravská cesta 9, 845 11 Bratislava 45, Slovakia
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岩本 光正
東工大
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若本 光正
東工大
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Iwamoto Mitsumasa
Dept. Of Phys. Elec Tokyo Tech.
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Zhang Le
Department Of Chemistry Wuhan University
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Majkova Eva
Institute Of Physics Slovak Academy Of Sciences
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WEI Ou-Yang
Department of Physical Electronics, Tokyo Institute of Technology
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Mori Takehiko
Department Of Organic Materials Tokyo Institute Of Technology
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Taniguchi M
Division Of Material Chemistry Faculty Of Engineering Kyoto University
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Weis Martin
Graduate School Of Science And Engineering Department Of Physical Electronics Tokyo Institute Of Tec
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Li Jun
Department Of Physical Electronics Tokyo Institute Of Technology
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Nadazdy Vojtech
Institute Of Physics Slovak Academy Of Sciences
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Yamamoto Tetsuya
Department Of Astronomy School Of Science The University Of Tokyo
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Gmucova Katarina
Institute Of Physics Slovak Academy Of Sciences
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Manaka Takaaki
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro, Tokyo 152-8552, Japan
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Matsuoka Yohei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro, Tokyo 152-8552, Japan
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Shino Tatsunori
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 845 11 Bratislava 45, Slovak Republic
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Weis Martin
Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova, Bratislava 81219, Slovakia
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Weis Martin
Institute of Electronics and Photonics, Slovak University of Technology, Ilkovicova, Bratislava 81219, Slovakia
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Weis Martin
Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 84511 Bratislava, Slovakia
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Lee Keanchuan
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Yamamoto Tetsuya
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro, Tokyo 152-8552, Japan
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Zhang Le
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Nádaždy Vojtech
Institute of Physics, Slovak Academy of Sciences, Dubravská cesta 9, 845 11 Bratislava 45, Slovakia
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Haško Daniel
International Laser Centre, Ilkovičova 3, 812 19 Bratislava, Slovakia
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Lin Jack
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Haško Daniel
International Laser Centre, Ilkovičova 3, 812 19 Bratislava, Slovakia
著作論文
- Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques
- Grain Boundary Effect on Charge Transport in Pentacene Thin Films
- Function of Interfacial Dipole Monolayer in Organic Field Effect Transistors
- Effects of Gold Nanoparticles on Pentacene Organic Field-effect Transistors
- Direct Probing of Photovoltaic Effect Generated in Double-Layer Organic Solar Cell by Electric-Field-Induced Optical Second-Harmonic Generation
- Analyzing Photo Induced Internal Electric Field in Pentacene/C Double-Layer Organic Solar Cells under Various External Voltages by Electric-Field-Induced Optical Second Harmonic Generation Measurement
- Effect of Photogenerated Carriers on Ferroelectric Polarization Reversal
- Contact Resistance as an Origin of the Channel-Length-Dependent Threshold Voltage in Organic Field-Effect Transistors
- Effect of an Upward and Downward Interface Dipole Langmuir--Blodgett Monolayer on Pentacene Organic Field-Effect Transistors: A Comparison Study
- Observation of Continuous and Quantized Domain Size and Shape Evolution in Monolayers at Air--Water Interface
- Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles
- Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles (Special Issue : Solid State Devices and Materials)