Effect of an Upward and Downward Interface Dipole Langmuir--Blodgett Monolayer on Pentacene Organic Field-Effect Transistors: A Comparison Study
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概要
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We studied carrier behaviors of pentacene organic field-effect transistors (OFETs) with an upward and a downward orientation dipole monolayer, inserted between the organic active layer and gate insulator by the Langmuir--Blodgett technique. The OFETs with an upward orientation of dipole monolayer showed large negative threshold voltage and high contact resistance compared with the reference OFETs without dipole monolayer, while the OFETs with a downward orientation dipole monolayer exhibited positive threshold voltage and low contact resistance. Based on the findings from this comparison study, we argued that using interface dipole monolayer is a useful way to design OFET performance.
- 2012-02-25
著者
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Ou-yang Wei
Department Of Physical Electronics Tokyo Institute Of Technology
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WEIS Martin
Institute of Electronics and Photonics, Slovak University of Technology
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Weis Martin
Institute of Electronics and Photonics, Slovak University of Technology, Ilkovicova, Bratislava 81219, Slovakia
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