Study of Carrier Behavior in Pentacene in a Au/Pentacene/Ferroelectric Poly(vinylidene fluoride–trifluoroethylene)/Indium Tin Oxide Structure by Electric-Field-Induced Second-Harmonic Generation Measurement

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概要

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• Through electric-field-induced second-harmonic generation (EFISHG) measurement, we studied carrier injection and accumulation in a pentacene layer under the effect of dipole reversal in a ferroelectric poly(vinylidene fluoride–trifluoroethylene) [P(VDF–TrFE)] layer. The change in the electric field in the pentacene layer due to polarization reversal in the P(VDF–TrFE) layer was determined by direct probing. Using the value of remnant polarization of P(VDF–TrFE) obtained from displacement current measurement (DCM), we showed that the EFISHG response closely reflected the hole injection and accumulation at the pentacene/P(VDF–TrFE) interface induced by spontaneous polarization in P(VDF–TrFE).

• 2010-12-25

著者

• Zhang Le

  Department Of Chemistry Wuhan University

• Manaka Takaaki

  Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec

• Iwamoto Mitsumasa

  Department Of Electrical And Electronic Engineering

• Ou-yang Wei

  Department Of Physical Electronics Tokyo Institute Of Technology

• Taguchi Dai

  Department Of Physical Electronics Tokyo Institute Of Technology

• Li Jun

  Department Of Biochemistry Zhongshan School Of Medicine Sun Yat-sen University

• Ou-Yang Wei

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Taguchi Dai

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

• Zhang Le

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan

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