Taguchi Dai | Department Of Physical Electronics Tokyo Institute Of Technology
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概要
関連著者
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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WEIS Martin
Institute of Electronics and Photonics, Slovak University of Technology
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TAGUCHI Dai
Department of Physical Electronics, Tokyo Institute of Technology
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Zhang Le
Department Of Chemistry Wuhan University
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Li Jun
Department Of Biochemistry Zhongshan School Of Medicine Sun Yat-sen University
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Lee Keanchuan
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Chen Xiangyu
Department Of Physical Electronics Tokyo Institute Of Technology
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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WEIS Martin
Department of Physical Electronics, Tokyo Institute of Technology
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Mori Takehiko
Department Of Organic Materials Tokyo Institute Of Technology
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Li Jun
Department Of Physical Electronics Tokyo Institute Of Technology
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Lin Jack
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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間中 孝彰
東工大
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岩本 光正
東工大
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若本 光正
東工大
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MANAKA Takaaki
Department of Physical Electronics, Tokyo Institute of Technology
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IWAMOTO Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology
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Iwamoto Mitsumasa
Tokyo Inst. Technol. Tokyo Jpn
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Iwamoto Mitsumasa
Dept. Of Phys. Elec Tokyo Tech.
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Taniguchi M
Division Of Material Chemistry Faculty Of Engineering Kyoto University
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ZHANG Le
Department of Physical Electronics, Tokyo Institute of Technology
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Mori Takehiko
Faculty Of Engineering Tohoku Institute Of Technology
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岩本 光正
東京工業大学
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Iwamoto M
Department Of Physical Electronics Tokyo Institute Of Technology
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Zhang Le
Department Of Electronics Engineering Shanghai Jiao Tong University
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Motoji Toshiko
Tokyo Women's Medical University
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岩本 光正
東京工業大学大学院・理工学研究科
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Manaka Takaaki
Graduate School Of Science And Engineering Department Of Physical Electronics Tokyo Institute Of Tec
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Ou-yang Wei
Department Of Physical Electronics Tokyo Institute Of Technology
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Mori T
Division Of Hematology Department Of Medicine Keio University School Of Medicine
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Miyazawa Ryo
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Mitsumasa Iwamoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Lin Jack
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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LI Jun
Department of Orthopaedic Surgery, Emory University School of Medicine
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MIYAZAWA Ryo
Department of Physical Electronics, Tokyo Institute of Technology
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Oda Yoshiaki
Department Of Agricultural Chemistry Yamagata University
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KAJIMOTO Norifumi
Department of Physical Electronics, Tokyo Institute of Technology
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TAGUCHI Dai
Tokyo Institute of Technology
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MANAKA Takaaki
Tokyo Institute of Technology
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IWAMOTO Mitsumasa
Corresponding author
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HIGA Hajime
Department of Physical Electronics, Tokyo Institute of Technology
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NAKAMURA Dai
Department of Physical Electronics, Tokyo Institute of Technology
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Majkova Eva
Institute Of Physics Slovak Academy Of Sciences
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Fukuzawa Masahiro
Department Of Electrical Engineering Kyushu Sangyo University
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Kajimoto Norifumi
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakamura Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Higa Hajime
Department Of Physical Electronics Tokyo Institute Of Technology
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Weis Martin
Graduate School Of Science And Engineering Department Of Physical Electronics Tokyo Institute Of Tec
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Manaka Takaaki
Tokyo Inst. Technol. Tokyo Jpn
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Nadazdy Vojtech
Institute Of Physics Slovak Academy Of Sciences
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Gmucova Katarina
Institute Of Physics Slovak Academy Of Sciences
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Takaaki Manaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Ou-Yang Wei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Li Jun
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Li Jun
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro, Tokyo 152-8552, Japan
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Shino Tatsunori
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, S3-33, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Tokyo Institute of Technology, S3-33, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Weis Martin
Institute of Physics, Slovak Academy of Sciences, Dubravská cesta 9, 845 11 Bratislava 45, Slovakia
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Weis Martin
Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 845 11 Bratislava 45, Slovak Republic
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Weis Martin
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Weis Martin
Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova, Bratislava 81219, Slovakia
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Zhang Le
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Zhang Le
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro, Tokyo 152-8552, Japan
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Nádaždy Vojtech
Institute of Physics, Slovak Academy of Sciences, Dubravská cesta 9, 845 11 Bratislava 45, Slovakia
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Haško Daniel
International Laser Centre, Ilkovičova 3, 812 19 Bratislava, Slovakia
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Ryo Miyazawa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Lin Jack
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33 O-okayama, Meguro, Tokyo 152-8552, Japan
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Zhang Le
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Masada Hiroshi
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Haško Daniel
International Laser Centre, Ilkovičova 3, 812 19 Bratislava, Slovakia
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Weis Martin
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Oda Yoshiaki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Sadakata Atsuo
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Karasuda Tetushu
Precise Gauges Co. Ltd., Hamamatsu 433-8105, Japan
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Kyomasu Mikio
Precise Gauges Co. Ltd., Hamamatsu 433-8105, Japan
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Fukuzawa Masahiro
Department of Electrical Engineering and Information Technology, Kyushu Sangyo University, Fukuoka 813-8503, Japan
著作論文
- Orientational Re-ordering of Polar Organic Monolayers by Cooperative Molecular Field Effect
- OrientationalOrdering Process of Liquid Crystalline Molecules Evaporated on Azobenzene Monolayer: Optical Polarized Absorption Measurements and Adsorption Kinetics
- In-situ Observation of 4'-n-pentyl-4-cyanobiphenyl Evaporated Film Growth by Polarized Absorption Measurement(Characterization of Organic Devices)(Recent Progress in Organic Molecular Electronics)
- Investigation of Single Monolayer Formation of the Evaporated Liquid Crystalline Molecules by the Surface Potential Measurement(Nano-interface Controlled Electronic Devices)(Recent Progress of Organic Molecular Electronics)
- Direct probing of carrier behavior in electroluminescence indium-zinc-oxide/N,N'-di-〔(1-naphthyl)-N,N'-diphenyl〕-(1,1'-biphenyl)-4,4'-diamine/tris(8-hydroxy-quinolinato)aluminum(3)/LiF/Al diode by time-resolved optical second-harmonic generation (Special
- The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation
- Direct Probing of Carrier Behavior in Electroluminescence Indium--Zinc-Oxide/N,N$\aku '$-Di-[(1-naphthyl)-N,N$\aku '$-diphenyl]-(1,1$'$-biphenyl)-4,4$'$-diamine/Tris(8-hydroxy-quinolinato)aluminum(III)/LiF/Al Diode by Time-Resolved Optical Second-Harmonic
- Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques
- Grain Boundary Effect on Charge Transport in Pentacene Thin Films
- Effects of Gold Nanoparticles on Pentacene Organic Field-effect Transistors
- Investigation of the Voltage Establishment and Relaxation Processes in a Double-Layer Device by Time-Resolved Optical Second-Harmonic Generation
- Direct Probing of Photovoltaic Effect Generated in Double-Layer Organic Solar Cell by Electric-Field-Induced Optical Second-Harmonic Generation
- Study of Carrier Behavior in Pentacene in a Au/Pentacene/Ferroelectric Poly(vinylidene fluoride–trifluoroethylene)/Indium Tin Oxide Structure by Electric-Field-Induced Second-Harmonic Generation Measurement
- Probing of Maxwell-Wagner Type Interfacial Charging Process in Double-Layer Devices by Time-Resolved Second Harmonic Generation
- Probing of Electric Field Distribution in ITO/PI/P3HT/Au Using Electric Field Induced Second Harmonic Generation
- Organic Electronics: Relaxation Time Controlled Devices
- Analyzing Photo Induced Internal Electric Field in Pentacene/C Double-Layer Organic Solar Cells under Various External Voltages by Electric-Field-Induced Optical Second Harmonic Generation Measurement
- Two-Step Polarization Reversal Process in Pentacene/Poly(vinylidene fluoride-trifluoroethylene) Double-Layer Capacitor : Reduced Coercive Field (Special Issue : Solid State Devices and Materials (1))
- Effect of Photogenerated Carriers on Ferroelectric Polarization Reversal
- Analysis of Anomalous Discharging Processes in Pentacene/C Double-Layer Organic Solar Cell (Special Issue : Solid State Devices and Materials (1))
- In situ Observations of Orientational Ordering Process of 4$'$-$n$-pentyl-4-cyanobiphenyl Ultra-Thin Film Using Polarized Absorption Measurements
- Contact Resistance as an Origin of the Channel-Length-Dependent Threshold Voltage in Organic Field-Effect Transistors
- Channel Formation as an Interface Charging Process in a Pentacene Field Effect Transistor Investigated by Time-Resolved Second Harmonic Generation and Impedance Spectroscopy
- Two-Step Polarization Reversal Process in Pentacene/Poly(vinylidene fluoride--trifluoroethylene) Double-Layer Capacitor: Reduced Coercive Field
- Study of Organic Field-Effect Transistors Using Charge Modulation Spectroscopy: Behavior of Injected Carriers
- Effect of Space-Charge Field on Injection Properties in Organic Sandwiched Structures
- Analysis of Interfacial Charging Process in Pentacene/C
- A Novel Microscope for Visualizing Electric Fields in Organic Thin Film Devices Using Electric-Field-Induced Second-Harmonic Generation
- Study of Hole-Injection Assisted Layer in Double-Layer Organic Light-Emitting Diodes by Electric-Field-Induced Optical Second-Harmonic Generation Measurement
- Dependence of the Carrier Transport Characteristics on the Buried Layer Thickness in Ambipolar Double-Layer Organic Field-Effect Transistors Investigated by Electrical and Optical Measurements
- Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles
- Effect of Trap Density on Carrier Propagation in Organic Field-Effect Transistors Investigated by Impedance Spectroscopy
- Analysis of Interfacial Charging Process in Pentacene/C₆₀/Bathocuproine Triple-Layer Organic Solar Cells Using a Maxwell-Wagner Model (Special Issue : Solid State Devices and Materials)
- Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles (Special Issue : Solid State Devices and Materials)