Study of Hole-Injection Assisted Layer in Double-Layer Organic Light-Emitting Diodes by Electric-Field-Induced Optical Second-Harmonic Generation Measurement

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概要

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• By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the physical reason for the decrease in the threshold voltage of indium tin oxide (ITO)/N,N^{\prime}-di-[(1-naphthyl)-N,N^{\prime}-diphenyl]-(1,1^\prime-biphenyl)-4,4^\prime-diamine (\alpha-NPD)/tris(8-hydroxy-quinolinato)aluminum(III) (Alq<inf>3</inf>)/Al diodes with a pentacene layer sandwiched between ITO and \alpha-NPD layers. The amount of charge accumulated at the \alpha-NPD/Alq<inf>3</inf>interface was the same as that at ITO/\alpha-NPD/Alq<inf>3</inf>/Al diodes under an applied DC voltage corresponding to the threshold voltage, although the charge accumulation proceeded faster. Results showed that the pentacene layer assists hole injection and the succeeding hole accumulation at the \alpha-NPD/Alq<inf>3</inf>interface, followed by the electroluminescence (EL) emission. The decrease in threshold voltage by inserting a hole-injection assisted layer such as pentacene is one way of improving the EL device performance.

• 2013-05-25

著者

• Oda Yoshiaki

  Department Of Agricultural Chemistry Yamagata University

• Fukuzawa Masahiro

  Department Of Electrical Engineering Kyushu Sangyo University

• Manaka Takaaki

  Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec

• Iwamoto Mitsumasa

  Department Of Electrical And Electronic Engineering

• Taguchi Dai

  Department Of Physical Electronics Tokyo Institute Of Technology

• Oda Yoshiaki

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Sadakata Atsuo

  Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Fukuzawa Masahiro

  Department of Electrical Engineering and Information Technology, Kyushu Sangyo University, Fukuoka 813-8503, Japan

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