Organic Electronics: Relaxation Time Controlled Devices
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概要
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In present work the charge transport through the metal–semiconductor–metal (MIM), organic field-effect transistor (OFET) and organic static induction transistor (OSIT) is discussed on the basis of dielectric physics. The propagation of injected carriers is evaluated by the transmission line model and discussed for two- and three-electrodes systems individually. On the basis of this analysis we find different carrier transport mechanism: (i) the drift in electric field for MIM structure, (ii) interface charge propagation on the organic semiconductor–gate insulator interface for the OFET structure, and (iii) drift or interface limited charge transport in the OSIT structure. We show that the charge transport mechanism depends on the relaxation time on the interface.
- 2010-04-25
著者
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WEIS Martin
Department of Physical Electronics, Tokyo Institute of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Mitsumasa Iwamoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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