Pentacene Field-Effect Transistor with Ferroelectric Gate Insulator as Maxwell–Wagner Effect Element

概要

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The behavior of charges in pentacene field-effect transistors (FETs) with a ferroelectric gate insulator [copolymer of vinylidene fluoride and tetrafluoroethylene, i.e., P(VDF-TeFE)] was investigated. Two peaks appeared in the $I_{\text{gs}}$–$V_{\text{gs}}$ characteristics at $V_{\text{ds}} = 0$ V. Analyzing the behavior of the charges in the pentacene FETs revealed that the first peak appearing at the lower $V_{\text{gs}}$ is ascribed to the exhaustion of accumulated holes at the pentacene/P(VDF-TeFE) interface in the direction from the interface to the source and drain electrodes in response to the electric field formed in pentacene. On the other hand, the second peak appearing at the higher $V_{\text{gs}}$ is ascribed to the turn-over of the spontaneous polarization of the P(VDF-TeFE). However, a threshold voltage shift due to the spontaneous polarization that was small compared with the expected shift suggests that the turn-over of the spontaneous polarization is partial. A mechanism of the turn-over of spontaneous polarization is analyzed in terms of the Maxwell–Wagner effect.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-01-25