Optical Second-Harmonic Generation Measurements of Hole Carrier Injection and Trapping in Pentacene Field-Effect Transistor
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概要
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In order to further clarify the carrier injection into pentacene field-effect transistors (FETs), we focused on the hysteresis behavior of the current–voltage ($I$–$V$) and capacitance–voltage ($C$–$V$) characteristics, and optical second-harmonic generation (SHG) measurement was employed. It was found that in the on state of pentacene FET, the SHG intensity decreases because of hole injection from the source electrode as well as hole trapping in pentacene. The SHG experiment at the off state of the FET shows that electron injection into pentacene from source and drain electrodes is also probable.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Lim Eunju
Department Of Physical Electronics Tokyo Institute Of Technology
-
Tamura Ryosuke
Department Of Physical Electronics Tokyo Institute Of Technology
-
Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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