Maxwell-Wagner Model Analysis for the Capacitance-Voltage Characteristics of Pentacene Field Effect Transistor (Special Issue: Solid State Devices & Materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Lim Eunju
Tokyo Inst. Technol. Tokyo Jpn
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Tamura Ryosuke
Department Of Physical Electronics Tokyo Institute Of Technology
関連論文
- Potential Drop at Electrode Contact of Organic Field-Effect Transistors Evaluated by Optical Second Harmonic Generation
- Analysis of charge accumulation in pentacene field effect transistor with ferroelectric gate insulator on the basis of Maxwell-Wagner model
- Optical second-harmonic generation measurements of hole carrier injection and trapping in pentacene field-effect transistor (Special issue: Solid state devices and materials)
- Analysis of threshold voltage shift of pentacene field effect transistor based on a Maxwell-Wagner effect (Special issue: Solid state devices and materials)
- Investigation of pentacene field-effect transistor operation by optical second-harmonic generation (Special issue: Solid state devices and materials)
- Analysis of Carrier Injection into Pentacene FET Using Maxwell-Wagner Model(Organic Molecular Devices,Towards the Realization of Organic Molecular Electronics)
- Electric field distribution in organic field effect transistor evaluated by microscopic second harmonic generation
- Analysis of hole trapping into pentacene FET by Optical Second Harmonic Generation and C-V measurements
- Analysis of Pentacene FET characteristics using a Maxwell-Wagner model
- Analysis of organic FET operation based on Maxwell-Wagner effect(Organic molecular devices)
- Maxwell-Wagner Model Analysis for the Capacitance-Voltage Characteristics of Pentacene Field Effect Transistor (Special Issue: Solid State Devices & Materials)
- Pentacene thickness dependence of FET properties in bottom contact structure ; Estimation of the effective channel thickness
- Observation of carrier behavior in organic field-effect transistors with electroluminescence under AC electric field (Special issue: Solid state devices and materials)
- Observation of electron injection into organic field-effect transistor with Au Electrodes using Electroluminescence under AC electric field (Special issue: Molecular electronics and bioelectronics)
- Probing of channel formation in organic field effect transistors by optical second harmonic generation measurement
- Observation of Carrier Behavior in Organic Field Effect Transistor with Electroluminescence under AC Electric Field
- Probing of Carrier Injection into Organic Field Effect Transistor by Optical Second Harmonic Generation
- Analysis of Threshold Voltage Shift of Pentacene Field Effect Transistor Based on a Maxwell–Wagner Effect
- Maxwell–Wagner Model Analysis for the Capacitance–Voltage Characteristics of Pentacene Field Effect Transistor
- Surface Morphology and Electrical Transport Properties of Polydiacetylene-Based Organic Field-Effect Transistors
- Optical Second-Harmonic Generation Measurements of Hole Carrier Injection and Trapping in Pentacene Field-Effect Transistor