Analysis of Threshold Voltage Shift of Pentacene Field Effect Transistor Based on a Maxwell–Wagner Effect
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概要
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A pentacene field-effect transistor (FET) with ferroelectric gate insulator (PVDF-TeFE) is analyzed as a Maxwell–Wagner effect element. The amount of carriers injected from the source electrode and subsequently accumulated at the pentacene FET channel changes depending on the spontaneous polarization of the gate insulator. The relationship between the spontaneous polarization and the threshold voltage shift is analyzed, and the hysteresis behavior observed in our pentacene FET with a PVDF-TeFE gate insulator is discussed in terms of carrier injection from the source electrode into the FET channel.
- 2007-04-30
著者
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Lim Eunju
Department Of Physical Electronics Tokyo Institute Of Technology
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Tamura Ryosuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Iwamoto Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tamura Ryosuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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