Effect of Trap Density on Carrier Propagation in Organic Field-Effect Transistors Investigated by Impedance Spectroscopy
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概要
- 論文の詳細を見る
The effect of interfacial traps at the organic semiconductor and insulating oxide interface in a pentacene organic field-effect transistor was examined by both DC and AC methods, represented by the steady-state current–voltage condition and impedance spectroscopy, respectively. A comparative technique for the observation of the effects of low and high trap densities on carrier injection and transport was proposed. An equivalent circuit based on the transmission line model was used to model the system, and the measured results across various biases showed very good fit to this model. We found that for high trap densities, the contact resistance increased markedly, and consequently affected the transport properties, which led to the disappearance of the typical space-charge-limited condition. The mobility under AC bias was also much lower than that under DC bias, which was likely due to the trapping-and-release process involved in the AC bias but not in the DC bias.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-01-25
著者
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Iwamoto Mitsumasa
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Lin Jack
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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