Effect of Space-Charge Field on Injection Properties in Organic Sandwiched Structures
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概要
- 論文の詳細を見る
Electrical properties of pentacene were investigated by impedance spectroscopy (IS) on the Au/pentacene/Al sandwiched structure, with nanoparticles introduced as trapping centers. Current–voltage ($I$–$V$) measurements revealed significant change of the properties due to change of internal electric field by trapped charge. With the nanoparticle-embedded pentacene, carrier injection became possible from both metals. IS results confirmed this effect, and further distinguished the bulk and interface behaviors. Capacitance was shown to increase with both positive and negative bias, indicating almost identical injection from both electrodes. Space charge effect is proposed to explain the phenomenon, assuming pentacene as a dielectric material and Schottky injection at the metal–organic interface. Injection into the bulk was observed by the capacitance increase, and the conductivity shows bulk-limited behavior at higher electric fields. A possible equivalent circuit that accounts for these experimental evidences was proposed, assuming pentacene function as dielectric materials, rather than as semiconductors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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WEIS Martin
Department of Physical Electronics, Tokyo Institute of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Taguchi Dai
Department Of Physical Electronics Tokyo Institute Of Technology
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Iwamoto Mitsumasa
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Lin Jack
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Taguchi Dai
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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Lin Jack
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
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