Analysis of Charge Accumulation in Pentacene Feld Effect Transistor with Ferroelectric Gate Insulator using Maxwell–Wagner Model
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概要
- 論文の詳細を見る
Pentacene field-effect transistors (FETs) with a ferroelectric gate insulator [P(VDF–TeFE)] were investigated to clarify the relationship between the behavior of injected carriers and dipolar polarization. Prepared samples showed a hysteresis behavior in the $I_{\text{ds}}$–$V_{\text{gs}}$ characteristics, because the amount of carriers accumulated at the channel changes in accordance with the spontaneous polarization of P(VDF–TeFE) films. However, the observed threshold voltage shift was smaller than expected one, and $I_{\text{gs}}$–$V_{\text{gs}}$ characteristics were not dependent on the channel length. These results show that the turn over of the spontaneous polarization occurs only in the channel region close to the source and drain electrodes.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Lim Eunju
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Yoshita Shuhei
Department Of Physical Electronics Tokyo Institute Of Technology
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tamura Ryousuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tamura Ryousuke
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yoshita Shuhei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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