Maxwell–Wagner Model Analysis for the Capacitance–Voltage Characteristics of Pentacene Field Effect Transistor
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概要
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The current–voltage ($I$–$V$) and capacitance–voltage ($C$–$V$) characteristics of pentacene field effect transistors (FETs) were examined to clarify channel formation in conjunction with the UV/ozone treatment of the source and drain metal (Au) electrodes. Analyzing the $I$–$V$ and $C$–$V$ characteristics of FETs using the Maxwell–Wagner model showed that the main charge carriers in the FET channel are holes injected from the source, and that a pentacene FET with a UV/ozone-treated substrate shows a high effective mobility owing to holes smoothly injected into the FET channel. Furthermore, the pentacene film thickness dependence on FET characteristics showed that a channel sheet with a thickness less than 20 nm is formed at the pentacene/SiO2 interface. Finally, the employment of the Maxwell–Wagner model for the analysis of the $C$–$V$ characteristics was shown to give a good approximation even when taking into account the presence of a charge sheet at the interface.
- 2006-04-30
著者
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Lim Eunju
Department Of Physical Electronics Tokyo Institute Of Technology
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Tamura Ryosuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Manaka Takaaki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Manaka Takaaki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S3-33 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tamura Ryosuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S3-33 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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