Tuning of Threshold Voltage in Organic Field-Effect Transistor by Dipole Monolayer
スポンサーリンク
概要
- 論文の詳細を見る
We have studied the threshold voltage shift of top-contact organic field-effect transistors (OFETs) with a dipole monolayer between pentacene active layer and SiO2 gate insulator. Since dipole moment projection in normal of the monolayer can be regulated by changing the ordering, the relationship between threshold voltage shift and spontaneous polarization of the monolayer has been gained. Experimental results show the dipole monolayer causes a large negative threshold voltage shift and the shift is linearly proportional to the polarization of the monolayer. We propose a dipole layer model to interpret the observed phenomena with an assumption that the threshold voltage shift is due to compensation of electric field in organic semiconductor layer induced by the dipole monolayer, which is uncommon for the general consideration. Excitingly, a good agreement between the experiment and the analysis shows validity of our modeling and provides the capability of tuning threshold voltage for OFET devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
-
Ou-yang Wei
Department Of Physical Electronics Tokyo Institute Of Technology
-
Chen Xiangyu
Department Of Physical Electronics Tokyo Institute Of Technology
-
Takaaki Manaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
-
Mitsumasa Iwamoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
-
Wei Ou-Yang
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
-
Martin Weis
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
-
Weis Martin
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
-
Xiangyu Chen
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan
関連論文
- Hysteresis Behavior Analysis of Organic Field Effect Transistor with P(VDF-TrFE) LB film gate-insulator
- Hysteresis behavior analysis of organic field effect transistor with P(VDF-TrFE) LB film gate-insulator (有機エレクトロニクス)
- The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation
- Direct Probing of Carrier Behavior in Electroluminescence Indium--Zinc-Oxide/N,N$\aku '$-Di-[(1-naphthyl)-N,N$\aku '$-diphenyl]-(1,1$'$-biphenyl)-4,4$'$-diamine/Tris(8-hydroxy-quinolinato)aluminum(III)/LiF/Al Diode by Time-Resolved Optical Second-Harmonic
- Function of Interfacial Dipole Monolayer in Organic Field Effect Transistors
- Effects of Gold Nanoparticles on Pentacene Organic Field-effect Transistors
- Study of Carrier Behavior in Pentacene in a Au/Pentacene/Ferroelectric Poly(vinylidene fluoride–trifluoroethylene)/Indium Tin Oxide Structure by Electric-Field-Induced Second-Harmonic Generation Measurement
- Study of Domain Shapes and Orientational Structure of Phospholipid Monolayers using Maxwell Displacement Current and Brewster Angle Microscopy
- Organic Electronics: Relaxation Time Controlled Devices
- Analyzing Photo Induced Internal Electric Field in Pentacene/C Double-Layer Organic Solar Cells under Various External Voltages by Electric-Field-Induced Optical Second Harmonic Generation Measurement
- Analysis of Anomalous Discharging Processes in Pentacene/C Double-Layer Organic Solar Cell (Special Issue : Solid State Devices and Materials (1))
- Effect of an Upward and Downward Interface Dipole Langmuir--Blodgett Monolayer on Pentacene Organic Field-Effect Transistors: A Comparison Study
- Study of Organic Field-Effect Transistors Using Charge Modulation Spectroscopy: Behavior of Injected Carriers
- Effect of Space-Charge Field on Injection Properties in Organic Sandwiched Structures
- Electron Injection into Pentacene Field-Effect Transistor Observed by Time-Resolved Optical Second Harmonic Generation Imaging
- Reduction of Hysteresis in Organic Field-Effect Transistor by Ferroelectric Gate Dielectric
- Analysis of Interfacial Charging Process in Pentacene/C
- Tuning of Threshold Voltage in Organic Field-Effect Transistor by Dipole Monolayer
- Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles
- Effect of Trap Density on Carrier Propagation in Organic Field-Effect Transistors Investigated by Impedance Spectroscopy
- Analysis of Interfacial Charging Process in Pentacene/C₆₀/Bathocuproine Triple-Layer Organic Solar Cells Using a Maxwell-Wagner Model (Special Issue : Solid State Devices and Materials)
- Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles (Special Issue : Solid State Devices and Materials)