Josephson Junctions Using Polyimide Langmuir-Blodgett Films with a Nb/Au/PI/(Pb-Bi) Structure
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概要
- 論文の詳細を見る
We fabricated Josephson junctions with the structure of Nb/Au/PI/(Pb-Bi) using an ultrathin polyimide (PI) Langmuir- Blodgett film as an electrically insulating layer with neither the presence of native oxide layers formed on the base Nb layer nor the dissolution of the base-Nb/Au electrode during the imidization of PAA (Polyamic acid long alkylamine salts) films to produce PI LB films. A typical I-V characteristic of weakly-coupled Josephson junctions was found to be obtained.
- 社団法人応用物理学会の論文
- 1991-03-01
著者
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Kubota Tohru
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
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Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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Sekine Matsuo
Department Of Applied Electronics Tokyo Institute Of Technology
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Noshiro Hideyuki
Department of Applied Electronics, Tokyo Institute of Technology
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Noshiro Hideyuki
Department Of Applied Electronics Tokyo Institute Of Technology
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