Thermally Stimulated Current Properties of Mobile Ion in SiO_2 Film of MOS Structure and Its Numerical Analysis
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概要
- 論文の詳細を見る
The behavior of sodium ions in the SiO_2 layer of MOS structures was analyzed using a new numerical method. The method is based on ionic hopping, and drift in the space charge field and diffusion were also taken into account. The computed results were applied to interpret the properties of a thermally stimulated current obtained experimentally. This is a useful method for measuring transient ionic motion in insulating films. It was found that the observed characteristics could be understood by ionic hopping, without assuming a surface ionic trap which has been proposed as a model for the behavior of ions in the SiO_2 film of MOS structures.
- 社団法人応用物理学会の論文
- 1981-08-05
著者
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IWAMOTO Mitsumasa
Department of Physical Electronics, Tokyo Institute of Technology
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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HINO Taro
Department of Neurology, Toride Kyodo General Hospital
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YAMASHITA Ken
Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Tech
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Hino Taro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
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Yamashita Ken
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
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Hino Taro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
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