Photoinduced Displacement Current in Polyimide Langmuir-Biodgett Films Deposited on Au Electrodes
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概要
- 論文の詳細を見る
The photoinduced displacement current polyimide (PI) Langmuir-Blodgett (LB) films incorporated in Au/PI/air-gap/Au structures was investigated without the application of an external electric field. Transient displacement current was found to be produced by photoirradiation with a wavelength of 400 nm, because carriers were generated in PI LB films and were then conveyed along the electric field established in a Schottky depletion region in the PI LB films.
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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FUKUDA Atsushi
Department of Physical Electronics, Tokyo Institute of Technology
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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