Measurement of Surface Energy States in Polyimide Larngmuir-Blodgett Tunneling Barrier
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概要
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We fabricated Au/polyimide (PI)/Pb junctions with the number of deposited PI Langmuir-Blodgett (LB) layers of 19-23 as tunneling barrier, and measured the current-voltage (I-V) and dV/dI-V characteristics of these junctions. Then, we estimated the distribution of the density of surface energy states in PILB film. It was suggested that electron accepting states exist at the interface. Integration of the density of the surface energy states in PILB film gave a value higher than 2 × 10^<24>m^<-3>. This result supports the conclusion of our previous study, which was obtained from surface potential measurement.
- 社団法人応用物理学会の論文
- 1998-08-15
著者
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Iwamoto Mitsumasa
Department Of Physical Electronics Tokyo Institute Of Technology
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Kubota Tohru
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address) Kansai Advanced R
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Kubota Tohru
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
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Iwamoto Mitsumasa
Department Of Electrical And Electronic Engineering
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KURAGASAKI Shinichi
Department of Physical Electronics, Tokyo Institute of Technology
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Kuragasaki Shinichi
Department Of Physical Electronics Tokyo Institute Of Technology
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