Thermal Desorption Study on Silicon Surfaces during Fluorine Removal Process with Atomic Deuterium Exposure
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概要
- 論文の詳細を見る
An accelerated desorption of fluorine adsorbates from silicon surfaces is induces by atomic deuterium (or hydrogen) exposure at low substrate temperature. The reaction processes have been investigated with in situ Auger analysis and thermally stimulated desorption spectroscopy (TDS) measurements. The experimental results of both fluorine decay and TDS spectra indicate that two kinds of the reaction products including SiDF molecules desorb from the surface in the initial stage of the reaction between the atomic deuterium and the fluorinated silicon. With the decrease in fluorine coverage, SiDF molecules desorb as the main reaction products. A deuterium-passivated silicon surface is obtained by atomic denterium treatment at 2000℃ for 30 min from the fluorinated surface.
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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SAITO Yoji
Department of Electrical Engineering and Electronics, Faculty of Engineering, Seikei University
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Kubota Tohru
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address) Kansai Advanced R
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Kubota Tohru
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
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Saito Yoji
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
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Saito Yoji
Department Of Anesthesiology School Of Medicine Shimane University
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