Suppressed Boron-Penetration through Surface-Nitrided Ultrathin Oxide Films Prepared by Fluorination and Subsequent Exposure to Atomic Nitrogen
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概要
- 論文の詳細を見る
Several percent of nitrogen was incorporated only near the top surfaces of thermally grown oxides, by surface fluorination at room temperature followed by an atomic nitrogen treatment at 550℃. The dependences of the nitrogen content and the thickness of the nitrided layer on the process condition were studied by angle-resolved X-ray photoelectron spectroscopy. A model of the nitridation process was also proposed. MOS capacitors with boron-doped polycrystalline silicon gates were fabricated using the nitrided ultrathin oxide. From the capacitance-voltage measurements we confirmed that the nitrided oxide would more effectively prevent boron penetration in comparison with the conventional oxide films. The proposed technique is a unique process for obtaining high-quality ultrathin dielectrics. [DOI: 10.1143/JJAP.41.1515]
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Tokuda Koichi
Department Of Electrical Engineering And Electronics Seikei University
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Saito Yoji
Department Of Electrical Engineering And Electronics Seikei University
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Saito Yoji
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
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Saito Yoji
Department Of Anesthesiology School Of Medicine Shimane University
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