Thermal Stability of Lanthanum Oxynitride Ultrathin Films Deposited on Silicon Substrates
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概要
- 論文の詳細を見る
We prepared lanthanum oxynitride films on p-type Si(100) substrates by electron beam evaporation. The films were deposited by evaporating lanthanum at a substrate temperature of 300 °C, and introducing oxygen and nitrogen radicals into a chamber. After the thermal annealing of the films at 600 °C for 30 min, the composition and depth profile of the films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES), respectively. We found that lanthanum oxynitride films suppress Si diffusion from the substrate as compared with lanthanum oxide films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-12-15
著者
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Saito Yoji
Department Of Anesthesiology School Of Medicine Shimane University
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Ito Masahiko
Department Of Integrated Biosciences Graduate School Of Frontier Sciences
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Saito Yoji
Department of Electrical Engineering and Electronics, Seikei University, 3-3-1 Kichijoji-Kitamachi, Musashino, Tokyo 180-8633, Japan
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Kawada Nobuhito
Department of Electrical Engineering and Electronics, Seikei University, 3-3-1 Kichijoji-Kitamachi, Musashino, Tokyo 180-8633, Japan
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Ito Masahiko
Department of Electrical Engineering and Electronics, Seikei University, 3-3-1 Kichijoji-Kitamachi, Musashino, Tokyo 180-8633, Japan
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