X-ray Photoelectron Study on the Adsorption of Anhydrous Hydrogen Fluoride onto Silicon Native Oxide
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概要
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The adsorption of anhydrous hydrogen fluoride (AHF) on the surfaces of silicon native oxide was investigated by in situ X-ray photoelectron spectroscopy (XPS) in order to understand the reaction between HF and the oxide films at room temperature. A significant amount of the component in located at 670.0 eV binding energy in the observed XPS spectra, and is most likely derived from HF molecules. Moreover, the surface density of F-Si bonds slowly increases with the AHF exposure. We also attempted to accelerate the etching of the native oxide without moisture, supplying the AHF gas with remote-plasma-excited Ar, and obtained the enhanced etch rate.
- 社団法人応用物理学会の論文
- 1997-11-01
著者
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Saito Yoji
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
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NAKAZAWA Yutaka
Department of Electrical Engineering and Electronics, Faculty of Engineering Seikei University
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Saito Yoji
Department Of Anesthesiology School Of Medicine Shimane University
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Nakazawa Yutaka
Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University
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