Nitridation of Silicon Oxide Surfaces by Fluorination and Subsequent Exposure to Atomic Nitrogen

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概要

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• Nitrogen incorporation into oxide surfaces is required to prevent the penetration of boron from the polycrystalline silicon gate to the substrate in metal-oxide-semiconductor devices. We incorporate nitrogen only into the oxide surfaces by fluorination at room temperature and a subsequent atomic nitrogen treatment at temperatures below 550℃. Incorporated nitrogen atoms are found to be bound to silicon atoms and oxygen atoms by X-ray photoelectron spectroscopy. Moreover, surface roughness is improved by the nitridation process. The proposed technique is a unique process to obtain high-quality ultrathin dielectrics.

• 社団法人応用物理学会の論文
• 1998-10-01

著者

• Saito Yoji

  Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University

• MORI Ukyo

  Department of Electrical Engineering and Electronics, Faculty of Engineering, Seikei University

• Saito Yoji

  Department Of Anesthesiology School Of Medicine Shimane University

• Mori Ukyo

  Department Of Electrical Engineering And Electronics Faculty Of Engineering Seikei University

• Saitoh Yoji

  Department of Electrical Engineering and Electronics, Faculty of Engineering, Seikei University

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