Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF_6 and SiH_4 Mixture
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-07-15
著者
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Itoh H
Semiconductor Academic Res. Center Tokyo Jpn
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Okano Haruo
Ulsi Research Center Toshiba Corp.
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ITOH Hitoshi
ULSI Research Center, Toshiba Corp.
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KAJI Naruhiko
ULSI Research Center, Toshiba Corp.
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WATANABE Toru
MOS Process Engineering Sec. II, Integrated Circuit Advanced Process Engineering Department, Toshiba
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Kaji Naruhiko
Ulsi Research Center Toshiba Corp.
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Itoh Hitoshi
Ulsi Research Center Toshiba Corp.
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Watanabe Toru
Mos Process Engineering Sec. Ii Integrated Circuit Advanced Process Engineering Department Toshiba Corp.
関連論文
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- Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF_6 and SiH_4 Mixture
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