Low Dielectric Constant Insulator by Downstream Plasma CVD at Room Temperature Using Si(CH_3)_4/O_2

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• Nara Akiko

  Ulsi Research Laboratories Toshiba Corporation

• ITOH Hitoshi

  ULSI Research Center, Toshiba Corp.

• Itoh Hitoshi

  Ulsi Research Center Toshiba Corp.

• Itoh Hitoshi

  Ulsi Research Laboratories Toshiba Corporation

関連論文

• Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF_6 and SiH_4 Mixture
• Low Dielectric Constant Insulator by Downstream Plasma CVD at Room Temperature Using Si(CH_3)_4/O_2
• Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O_2

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