A Fully Integrated Aluminum Dual Damascene Process Using a New Double Stopper Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-10-15
著者
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Shibata Hideki
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Advanced Microelectronic
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Shibata Hideki
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory
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ANAND Minakshisundaran
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, Advanced Microelectron
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NAKAMURA Naofumi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory
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WADA Jun-ichi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory
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OIKAWA Yasushi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory
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KATATA Tomio
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory
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SHIBA Katsuyasu
Integrated Circuit Advanced Process Engineering Department, Advanced Microelectronics Center, Toshib
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Katata Tomio
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory
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Wada Jun-ichi
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory
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Oikawa Yasushi
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory
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Shiba Katsuyasu
Integrated Circuit Advanced Process Engineering Department Advanced Microelectronics Center Toshiba
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Nakamura Naofumi
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory
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Anand Minakshisundaran
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory
関連論文
- A Study of Mechanical Stability Issues in Multilevel Air-Dielectric Interconnect Schemes for ULSIs
- A Fully Integrated Aluminum Dual Damascene Process Using a New Double Stopper Structure
- In Situ Transmission Electron Microseopy Observation of Single Crystallization of Filled Aluminum Interconnection
- Formation of Single-Crystal Al Interconnection by In Situ Annealing