Preparation of GaAs-Ge and InAs-GaAs Heterojunctions in a Closed Tube System Using Iodine Process

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概要

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• Preparation of single crystal heterojuctions is investigated in the vapor growth of GaAs on Ge or of InAs on GaAs substrate by varying their basic growth parameters such as source and substrate temperatures, iodine carrier concentration and crystal orientation. The relations between growth conditions, growth rate and crystal quality are discussed. The most remarkable feature is the appearance of an intermediate layer of 10-20 μ thick between substrate and grown film which is observed over a rather wide range of growth conditions and which plays a fairly important role in junction electrical properties. Experimental results suggested that the origin of this intermediate layer was strongly connected with the species that was once vaporized from the substrate and precipitated in the closed tube.

• 社団法人応用物理学会の論文
• 1967-09-05

著者

• Iida Shinya

  Central Research Laboratory Hitachi Ltd.

• Kasano Hiroyuki

  Central Research Laboratory Hitachi Ltd.

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• Epitaxial Growth of Germanium by the Hydrogen Reduction of GeI_4
• Vapor Etching of Germanium by Germanium Tetraiodide
• Preparation of GaAs-Ge and InAs-GaAs Heterojunctions in a Closed Tube System Using Iodine Process

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