Vapor Etching of Germanium by Germanium Tetraiodide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1964-01-15
著者
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Iida Shinya
Central Research Laboratory Hitachi Ltd.
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SUGITA Yoshimitsu
Central Research Laboratory, Hitachi Ltd.
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Nomura Masayoshi
Central Research Laboratory Hitachi Ltd.
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Sugita Yoshimitsu
Central Research Laboratory Hitachi Ltd.
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Iida S.
Central Research Laboratory, Hitachi, Ltd.
関連論文
- Measurements on Local Variations in Spacing and Orientation of the Lattice Plane of Silicon Single Crystals by X-Ray Double-Crystal Topography
- Vapor Growth of Germanium by the Hydrogen Reduction of Germanium Tetraiodide
- Epitaxial Vapor Growth in Germanium-Bromine System
- Dislocation Etch Pits on the (1102) Surface of Sapphire Crystals
- Diffusion of Impurities in the Semiconductor Melt III. : Experimental Determination of Thickness of the Solute Diffusion Layer in the Melting Process
- A Thin GaAs N on N^+ Epitaxial Film with Abrupt Interface in Carrier Concentration Profile
- Vapor Etching of GaAs Single Crystals with HCl Gas
- Epitaxial Growth of Germanium by the Hydrogen Reduction of GeI_4
- Vapor Etching of Germanium by Germanium Tetraiodide
- Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals
- Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film
- A New Technique of X-Ray Diffraction Microscopy of Scanning Type
- Preparation of GaAs-Ge and InAs-GaAs Heterojunctions in a Closed Tube System Using Iodine Process
- X-Ray Observations of Defect Structures in Silicon Crystals