Diffusion of Impurities in the Semiconductor Melt

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概要

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• A new process for the production of npn or pnp junction crystals is developed. In this process, n type single crystal of silicon is contacted to the molten silicon doped with suitable amount of donor and acceptor impurities. These impurities diffuse simultaneously from the melt directly into the crystal. In the case of silicon acceptor impurity has a higher diffusivity than donor impurity. So the npn junction crystal is produced. An analysis of experiments using the following model is giver: solute diffusion layer exists directly under the melting crystal. Thickness of this layer is found to be 0.1 mm for the melting speed of 20μ/sec and crystal rotation rate of 120 rpm. Similar experiment is carried out on germanium npn junction.

• 社団法人日本物理学会の論文
• 1962-01-05

著者

• Tauchi Shoji

  Central Research Laboratory Hitachi Led.

関連論文

• Diffusion of Impurities in the Semiconductor Melt III. : Experimental Determination of Thickness of the Solute Diffusion Layer in the Melting Process
• An Evidence for the Existence of a Diffusion Layer in the Melting Process of Semiconductors
• Diffusion of Impurities in the Semiconductor Melt II. : Dynamical Analysis of Impurity Redistribution in the Melting Process
• Diffusion of Impurities in the Semiconductor Melt

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