Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon
スポンサーリンク
概要
- 論文の詳細を見る
Electron spin resonance experiments were carried out at room temperature on n-types slicon doped with various amounts of phosphorus. A single absorption line was observed in samples of fairly large electron concentration. The line width of electron spin resonance absorption was found to increase, while the g-factor to decrease with the increase of electron concentration in the sample. The experimental results were found to agree qualitatively with the existing theories of the electron spin resonance of conduction electrons.
- 社団法人日本物理学会の論文
- 1964-06-05
著者
-
Kodera Hiroshi
Central Research Laboratory Hitachi Ltd.
-
KODERA Hiroshi
Central Research Laboratory, Hitachi Ltd.,
関連論文
- A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction
- A Theory for Intervalley Transfer Effect in Two-Valley Semiconductors
- Two-dimensional Analysis of Vertical Junction Gate FET's : A-4: FIELD EFFECT TRANSISTORS (I)
- Effect of Field-Dependent Carrier Diffusion on the Two-Dimensional Analysis of a Junction Gate FET
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. : III. Absorption Intensity
- Implication of Contact Thermalization Effect in Two-Valley Semiconductors for the High Frequency Device Performance
- Diffusion of Impurities in the Semiconductor Melt III. : Experimental Determination of Thickness of the Solute Diffusion Layer in the Melting Process
- Diffusion of Impurities in the Semiconductor Melt II. : Dynamical Analysis of Impurity Redistribution in the Melting Process
- Constitutional Supercooling during the Crystal Growth of Germanium and Silicon
- Effect of Doping on the Electron Spin Resonanceain Phosphorus Doped Silicon Studied at Liquid Nitrogen Temperature
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. : IV. Experimental Study at Liquid Helium Temperature
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon
- Precipitation of Antimony in Heavily Doped Silicon Identified by X-ray Microanalyzer
- Diffusion Coefficients of Impurities in Silicon Melt
- Dyson Effect in the Electron Spin Resonance of Phosphorus Doped Silicon
- Solid Solubility of Gold in Germanium