GaAs-Ge Alloyed Junction

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1964-12-15

著者

• Shirafuji Junji

  Central Research Laboratory Hitachi Ltd.

• Shirafuji Junji

  Central Research Laboratory

• NAKAYAMA Matsumi

  Central Research Laboratory, Hitachi Ltd.

• Nakayama Matsumi

  Central Research Laboratory Hitachi Ltd.

関連論文

• A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction
• Growth of Gallium Arsenide Single Crystals by Free Surface Method
• GaAs-Ge Alloyed Junction
• Low Frequency Photocurrent Oscillation in High Resistivity GaAs
• Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper
• Current Oscillation and Some Photoelectric Properties in High Resistivity Gallium Arsenide Produced by Irradiation of Fast Neutrons
• Effect of Heat Treatment on p-GaAs with Diffused Cu
• Impurity Conduction in p-GaAs with Diffused Cu

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