Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper

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概要

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• Temperature dependence of the photoconductive lifetime has been studied in the temperature range 100°-360°K on n-type gallium arsenide partially compensated with copper. It is confirmed that in n-type gallium arsenide the electron lifetime is determined by the presence of two different levels: one is a recombination level at about the middle of the band gap and the other is an acceptor level near the valence band. The electron capture-cross-section of the acceptor level is estimated to be 10^<-22>-2×10^<-23> cm^2. From the magnitude of the hole capture-cross-section, the recombination level is presumed to be a donor.

• 社団法人応用物理学会の論文
• 1968-09-05

著者

• Shirafuji Junji

  Central Research Laboratory Hitachi Ltd.:(present Address) Department Of Electrical Engineering Facu

• Shirafuji Junji

  Central Research Laboratory

関連論文

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• Growth of Gallium Arsenide Single Crystals by Free Surface Method
• GaAs-Ge Alloyed Junction
• Low Frequency Photocurrent Oscillation in High Resistivity GaAs
• Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper
• Current Oscillation and Some Photoelectric Properties in High Resistivity Gallium Arsenide Produced by Irradiation of Fast Neutrons
• Effect of Heat Treatment on p-GaAs with Diffused Cu
• Impurity Conduction in p-GaAs with Diffused Cu

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