Epitaxial Growth of GaAs_<1-x>P_x

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1971-10-05

著者

• KURATA Kazuhiro

  Central Research Laboratory, Hitachi Ltd.

• Kurata Kazuhiro

  Central Research Laboratory Hitachi Ltd.

• OGIRIMA Masahiko

  Central Research Laboratory, Hitachi Ltd.

• Ogirima Masahiko

  Central Research Laboratory Hitachi Ltd.

関連論文

• Growth of Gallium Arsenide Single Crystal from Liquid Phase on Seed Crystal
• Zinc Diffusion into GaAs_P_x by Ga-P-Zn Ternary Alloy Source
• A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction
• Growth of Gallium Arsenide Single Crystals by Free Surface Method
• Epitaxial Growth of GaAs_P_x
• Effect of Donor Concentration on Several Properties of Gallium Arsenide Phosphide
• Vapor-Phase Epitaxial Growth and Defects of Gallium Phosphide

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