Vapor-Phase Epitaxial Growth and Defects of Gallium Phosphide

スポンサーリンク

概要

• 論文の詳細を見る

• Gallium phosphide single crystals are epitaxially grown on gallium arsenide substrates from vapor phase by an open-tube method. Surface morphology and crystal defects of growth layers are investigated in relation to growth conditions. It is found that the growth rate and the crystal perfection are much affected by the concentration of phosphorus trichloride in the carrier gas. Under the hillocks on the surface, there exist pyramidal imperfect regions. These defective regions are investigated by optical microscopy, polarization microscopy and X-ray topography.

• 社団法人応用物理学会の論文
• 1972-03-05

著者

• Ogirima Masahiko

  Central Research Laboratory Hitachi Ltd.

関連論文

• Epitaxial Growth of GaAs_P_x
• Effect of Donor Concentration on Several Properties of Gallium Arsenide Phosphide
• Vapor-Phase Epitaxial Growth and Defects of Gallium Phosphide

スポンサーリンク