Three-dimensional STEM for observing nanostructures
スポンサーリンク
概要
- 論文の詳細を見る
- Published for the Japanese Society of Electron Microscopy by Oxford University Pressの論文
- 2001-06-01
著者
-
Iwaki Masaya
The Institute Of Physical And Chemical Research
-
KOGUCHI Masanari
Central Research Laboratory, Hitachi Ltd.
-
KASE Kiwamu
The Institute of Physical and Chemical Research
-
Tsuneta Ruriko
Central Research Laboratory Hitachi Ltd
-
Yamaoka Masahiro
Central Research Laboratory Hitachi Ltd
-
Kakibayashi Hiroshi
Central Research Laboratory Hitachi Ltd
-
Niino Toshiki
Tokyo University
-
TANAKA Nobuo
Nagoya University
-
Koguchi Masanari
Central Research Laboratory Hitachi Ltd
-
Tanaka Nobuo
Nagoya Univ. Furo‐cho Nagoya Jpn
-
Tsuneta Ruriko
Central Research Laboratory, Hitachi Ltd
-
Koguchi Masanari
Central Research Laboratory, Hitachi Ltd
関連論文
- Observation of Fe-Mn Oxidation Process Using Specimen Transfer Chamber and Ultrahigh-Vacuum Transmission Electron Microscope
- Three-Axis NC Cutter Path Generation for Subdivision Surface with Z-Map
- Model-Based Simulation System for Planning Numerical Controlled Multi-Axis 3D Surface Scanning Machine
- Concentration Profiles of Nickel and Chromium Implanted in Mild Steel
- Eleetroluminescence of Europium Ion-Implanted Aluminum during Anodization
- Frictional Properties of Nickel and Copper Implanted Low Carbon Steel Plates
- XY-Stage-Based Electron-Beam Recorder for the Single-Carrier Independent Pit-Edge Recording Radial Partial Response Format
- Influence of Ion Sputtering on Auger Electron Spectroscopy Depth-Profiling of GaAs / AlGaAs Superstructure
- XY-Stage Driving Electron-Beam Mastering with Nanometer-Accuracy Positioning for High-Density Optical Disk
- Comparison of Microstructure of Cross-Sectional CoCr Thin Film Specimens Prepared by Fracture, Microtome, and Ion-Beam Thinning Methods
- Microstructure of CoCr Thin Films Prepared by Sputtering
- Microstructure of Visible Light Emitting Porous Silicon
- Lattice Location of Ni Atoms Implanted into Al Crystals as Investigated by Means of Channeling Method
- Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type
- Effect of Ion Implantations and Post-treatments on Optical Transmission of Fluorozirconate Glass
- Optical Characterization of Ion-Implanted Glass Surface Layers with Surface Plasmon Resonance Method
- Ion-Beam-Induced White Luminescence of CaF_2 Implanted with Both Eu and Tb Ions
- Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
- Highly Accurate Composition Analysis of (Pb, Zr)TiO_3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer
- Improvement of Electron Beam Recorder for Mastering of Future Storage Media
- Comparison of Relaxation Process of Compressive and Tensile Strains in InGaAs Lattice-Mismatched Layers on InP Substrates
- Strained Lattice Structure Analysis of InGaAsP Multilayers Using Thickness Fringes in Transmission Electron Microscopy Images
- High Resolution X-Ray Elemental Mapping Using 300-kV Field-Emission TEM
- First experiments of selected area nano-diffraction from semiconductor interfaces using a spherical aberration corrected TEM
- Direct Observation of Strain Distribution in InP/In_Ga_xP Heterointerfaces by the Compositional Analysis by Thickness Fringe Method
- A new FIB fabrication method for micropillar specimens for three-dimensional observation using scanning transmission electron microscopy
- Anodic Dissolution Behaviour of Si- and Ti-Implanted Iron
- Three-Dimensional Structure Analysis of Metal-Oxide-Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
- Observation of Fine Compositional Fluctuation in GaAs/AI_xGa_As Superstructure Using Composition Analysis by Thickness-Fringe (CAT) Method
- Three-dimensional STEM for observing nanostructures
- A specimen-drift-free EDX mapping system in a STEM for observing two-dimensional profiles of low dose elements in fine semiconductor devices
- Position Alignment in Algebraic Reconstruction Method by Using Center of Gravity
- Simulation Study of Noise Influence in 3-Dimensional Reconstruction using High-Angle Hollow-Cone Dark-Field Transmission Electron Microscope Images
- Atomic Species Analysis and Three-Dimensional Observation by High-Angle Hollow-Cone Dark-Field Transmission Electron Microscopy
- Observation of Incoherent Images through Minute Fluctuations of Lens Excitation Current
- Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
- Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/Al_xGa_ As Multilayer Structure
- Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/ Al_xGa_As Superstructure
- Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
- New Structure on TiN(001) Cleaved Surfaces
- Depth Profiling of Superstructures by μ-AES Utilizing Angle-Lapped Specimens: Techniques, Instrumentations and Measurement
- Detection of Strain in InP/InGaP Superlattices by Dark-Field Electron Microscopy and Nano-Diffraction Technique
- Observation of OMVPE-Grown GaInP/GaAs Cross-Sections by Transmission Electron Microscopy
- Microstructures of Co/Cr Bilayer Films Epitaxially Grown on MgO Single-Crystal Substrates
- Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation
- High-Resolution Stress Mapping of 100-nm Devices Measured by Stress TEM
- Preface to EELS special issue
- Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs