Tsuneta Ruriko | Central Research Laboratory Hitachi Ltd
スポンサーリンク
概要
関連著者
-
Tsuneta Ruriko
Central Research Laboratory Hitachi Ltd
-
Kakibayashi Hiroshi
Central Research Laboratory Hitachi Ltd
-
Tsuneta R
Hitachi Ltd Tokyo Jpn
-
NAKAMURA Kuniyasu
Central Research Laboratory, Hitachi Ltd.
-
Nakamura Kuniyasu
Central Research Laboratory Hitachi Ltd
-
Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
-
Kakibayashi H
Hitachi Ltd. Tokyo Jpn
-
KOGUCHI Masanari
Central Research Laboratory, Hitachi Ltd.
-
KAKIBAYASHI Hiroshi
The authors are with Central Research Laboratory, Hitachi Ltd.
-
Koguchi Masanari
Central Research Laboratory Hitachi Ltd
-
Iwaki Masaya
The Institute Of Physical And Chemical Research
-
KAKIBAYASHI Hiroshi
Central Research Laboratory, Hitachi Ltd.
-
TSUCHIYA Tomonobu
Central Research Laboratory, Hitachi, Ltd.
-
KOMORI Masaaki
Central Research Lab. HITACHI, Ltd.
-
KASE Kiwamu
The Institute of Physical and Chemical Research
-
MITSUI Yasuhiro
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
-
Tsuchiya Tomonobu
Central Research Laboratory Hitachi Ltd.
-
Tsuchiya Tomonobu
Central Research Laboratory Hitachi Ltd
-
TANIWATARI Tsuyoshi
Central Research Laboratory, Hitachi Ltd.
-
KARIYA Michihiko
Department of Electrical and Electronic Engineering, Meijo University
-
Katsuragawa Maki
Meijo University
-
Komori M
Meijo Univ. Nagoya Jpn
-
Komori Masaaki
Central Research Lab. Hitachi Ltd.
-
TSUNETA Ruriko
Central Research Laboratory, Hitachi Ltd.
-
Mitsui Yasuhiro
Semiconductor & Integrated Circuits Division Hitachi Ltd.
-
Nishida Akio
Semiconductor * Integrated Circuits Division Hitachi Ltd
-
Yamaoka Masahiro
Central Research Laboratory Hitachi Ltd
-
Taniwatari Tsuyoshi
Central Research Laboratory Hitachi Ltd.
-
Niino Toshiki
Tokyo University
-
TANAKA Nobuo
Nagoya University
-
Tanaka Nobuo
Nagoya Univ. Furo‐cho Nagoya Jpn
-
Tsuneta Ruriko
Central Research Laboratory, Hitachi Ltd
-
Koguchi Masanari
Central Research Laboratory, Hitachi Ltd
著作論文
- Comparison of Relaxation Process of Compressive and Tensile Strains in InGaAs Lattice-Mismatched Layers on InP Substrates
- Three-dimensional STEM for observing nanostructures
- A specimen-drift-free EDX mapping system in a STEM for observing two-dimensional profiles of low dose elements in fine semiconductor devices
- Position Alignment in Algebraic Reconstruction Method by Using Center of Gravity
- Simulation Study of Noise Influence in 3-Dimensional Reconstruction using High-Angle Hollow-Cone Dark-Field Transmission Electron Microscope Images
- Atomic Species Analysis and Three-Dimensional Observation by High-Angle Hollow-Cone Dark-Field Transmission Electron Microscopy